2SA1993

< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65 0.95 APPLICATION For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3 0.3 ① ② ③ ① ② ③ 2.9 1.90 0.65 0.9 1.1 0.95 0.15 0.7 0.8 JEITA：SC-70 JEDEC：－ TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 0～0.1 JEITA：SC-59 JEDEC：TO-236 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 2SA1993 www.DataSheet4U.com 3.0 0～0.1 4.0 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.4 2.5 ① ② ③ JEITA：－ JEDEC：－ TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE ISAHAYA ELECTRONICS CORPORATION 0.16 0.4 < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) MAXIMUM RATINGS（Ｔａ＝２５℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 2SA1235A -60 -6 -50 200 200 200 +150 -55～+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parame ter Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ Symbol C to E break down voltage Collector cut of...