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Type Transistor. 2SA1993 Datasheet

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Type Transistor. 2SA1993 Datasheet
















2SA1993 Transistor. Datasheet pdf. Equivalent













Part

2SA1993

Description

Silicon PNP Epitaxial Type Transistor



Feature


< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2 SA1602A 2SA1993 FOR LOW FREQUENCY AMPL IFY APPLICATION SILICON PNP EPITAXIAL T YPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0 .5 Unit:mm 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter satu ration voltage VCE(sat)=-0.3V .
Manufacture

Isahaya Electronics Corporation

Datasheet
Download 2SA1993 Datasheet


Isahaya Electronics Corporation 2SA1993

2SA1993; max 0.65 0.95 APPLICATION For Hybrid I C,small type machine low frequency volt ageAmplify application 2.0 1.3 0.3 ② ③ ① ② ③ 2.9 1.90 0.65 0.9 1.1 0.95 0.15 0.7 0.8 JEITA SC-70 JEDEC:- TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTO R 0~0.1 JEITA:SC-59 JEDEC:TO-23 6 TERMINAL CONNECTER ①:BASE ②: EMITTER ③:COLLECTOR 2SA1993 www.DataSheet4U.com 3.0 0~0.1 .


Isahaya Electronics Corporation 2SA1993

4.0 14.0 1.0 1.0 0.1 0.45 1.27 1.27 0.4 2.5 ① ② ③ JEITA:- JEDEC :- TERMINAL CONNECTER ①:EMITTER ②:COLLECTOR ③:BASE ISAHAYA EL ECTRONICS CORPORATION 0.16 0.4 < SMA LL-SIGNAL TRANSISTOR > 2SA1235A 2SA16 02A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE( Super mini type) MAXIMUM RATINGS(T a=25℃) Symbol VCBO VEBO VCEO I C PC Tj Tstg Para.


Isahaya Electronics Corporation 2SA1993

meter Collector to Base voltage Emitter to Base voltage Collector to Emitter vo ltage Collector current Collector dissi pation Junction temperature Storage tem perature Ratings 2SA1235A -60 -6 -50 20 0 200 200 +150 -55~+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS(Ta=25 ) Parame ter V(BR)CE O I CBO I EBO Symbol C to E break down volt.





Part

2SA1993

Description

Silicon PNP Epitaxial Type Transistor



Feature


< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2 SA1602A 2SA1993 FOR LOW FREQUENCY AMPL IFY APPLICATION SILICON PNP EPITAXIAL T YPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0 .5 Unit:mm 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter satu ration voltage VCE(sat)=-0.3V .
Manufacture

Isahaya Electronics Corporation

Datasheet
Download 2SA1993 Datasheet




 2SA1993
FEATURE
Super mini package for easy mounting
Excellent linearity of DC forward gain
・Small collector to emitter saturation voltage
VCE(sat)=-0.3V max
APPLICATION
For Hybrid IC,small type machine low frequency
voltageAmplify application
< SMALL-SIGNAL TRANSISTOR >
2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING
2SA1602A
2SA1235A
Unit:mm
2.1
0.425 1.25 0.425
2.5
0.5 1.5 0.5
②③
②③
www.DataSheet4U.com
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
JEITA:SC-59
JEDEC:TO-236 類似
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
2SA1993
4.0
0.1
0.45
1.27 1.27
ISAHAYA ELECTRONICS CORPORATION
①②③
JEITA:-
JEDEC:-
TERMINAL CONNECTER
①:EMITTER
②:COLLECTOR
③:BASE




 2SA1993
< SMALL-SIGNAL TRANSISTOR >
2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS(Ta=25℃)
Symbol
CBO
EBO
CEO
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter
voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
2SA1235A
-60
200
Ratings
2SA1602A
-60
-6
-50
200
200
+150
-55~+150
2SA1993
-50
450
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parame
ter
Symbol
Test conditions
(BR)CEO
CBO
EBO
FE*
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
I C=-100μA,RBE=∞
2SA1993
2SA1235A,2SA1602A
VEB=-6V,I C =0
VCE=-6V,I C =-1mA
VCB=-50V,I E =0
VCB=-60V,I E =0
FE C to E Saturation Vlotage
2SA1993
2SA1235A,2SA1602A
VCE=-6V,I C =-0.1mA
CE(sat)
Cob
NF
Gain bandwidth product
Collector output capacitance
C to E break down voltage
Noise figure
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA,f=100Hz,RG=10kΩ
*: It shows hFE classification in below table.
Limits
Min Typ Max
-50
-0.1
-0.1
-0.1
150 500
50
90
-0.3
200
4.0
20
Unit
V
μA
μA
V
MHz
pF
dB
hFE 2SA1235A
www.DataSheet4U.2cSoAm1602A
2SA1993
E
150~300
F
250~500
ISAHAYA ELECTRONICS CORPORATION




 2SA1993
2SA1235A、2SA1602
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
250
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERTURE Ta (℃)
< SMALL-SIGNAL TRANSISTOR >
2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1993
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
500
400
300
200
100
0
0 25 50 75 100 125 150
AMBIENT TEMPERTURE Ta (℃)
www.DataSheet4U.com
ISAHAYA ELECTRONICS CORPORATION




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