Document
IGW75N60T
TRENCHSTOP™ Series
q
Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for :
- Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO247-3
Type IGW75N60T
VCE 600V
IC 75A
VCE(sat),Tj=25°C 1.5V
Tj,max 175C
Marking G75T60
Package PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol VCE
IC
ICpuls VGE
tSC
Ptot Tj Tstg -
Value 600
118 85 225 225 20
5
428 -40...+175 -55...+150
260
Unit V
A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.7 10.01.2018
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient
IGW75N60T
TRENCHSTOP™ Series
q
Symbol RthJC RthJA
Conditions
Max. Value 0.35 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
V(BR)CES VCE(sat)
VGE(th) ICES
VGE=0V, IC=0.2mA VGE = 15V, IC=75A Tj=25C Tj=175C IC=1.2mA,VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C
IGES gfs RGint
VCE=0V,VGE=20V VCE=20V, IC=75A
min.
600
4.1
-
Value Typ.
-
1.5 1.9 4.9
41 -
Unit max.
-V
2.0 -
5.7 µA
40 5000 100
-
nA S Ω
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge
Ciss Coss Crss QGate
Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1)
LE IC(SC)
VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=75A VGE=15V
VGE=15V,tSC5s VCC = 400V, T j 150C
-
-
-
4620 288 137 470
13
687.5
- pF - nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.7 10.01.2018
IGW75N60T
TRENCHSTOP™ Series
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy1) Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=25C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode from IKW75N60T
min.
-
Value Typ.
33 36 330 35 2.0 2.5 4.5
Unit max.
- ns - mJ -
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy1) Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=175C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode from IKW75N60T
min.
-
Value Typ.
32 37 363 38 2.9 2.9 5.8
Unit max.
- ns - mJ -
IFAG IPC TD VLS
3
Rev. 2.7 10.01.2018
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
IGW75N60T
TRENCHSTOP™ Series
q
200A
150A 100A
TC=80°C TC=110°C
50A
0A 10Hz
Ic Ic
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 5)
100A
t =1µs p
10µs
50µs 10A
1ms 10ms DC 1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V)
Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT
400W
350W
300W
250W
200W
150W
100W
50W
0W 25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE Power dissipation as a function of case temperature (Tj 175C)
120A
90A
60A
30A
0A 25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.7 10.01..