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IGW75N60T Dataheets PDF



Part Number IGW75N60T
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet IGW75N60T DatasheetIGW75N60T Datasheet (PDF)

IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE.

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IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO247-3 Type IGW75N60T VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking G75T60 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls VGE tSC Ptot Tj Tstg - Value 600 118 85 225 225 20 5 428 -40...+175 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.7 10.01.2018 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient IGW75N60T TRENCHSTOP™ Series q Symbol RthJC RthJA Conditions Max. Value 0.35 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor V(BR)CES VCE(sat) VGE(th) ICES VGE=0V, IC=0.2mA VGE = 15V, IC=75A Tj=25C Tj=175C IC=1.2mA,VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C IGES gfs RGint VCE=0V,VGE=20V VCE=20V, IC=75A min. 600 4.1 - Value Typ. - 1.5 1.9 4.9 41 - Unit max. -V 2.0 - 5.7 µA 40 5000 100 - nA S Ω Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) LE IC(SC) VCE=25V, VGE=0V, f=1MHz VCC=480V, IC=75A VGE=15V VGE=15V,tSC5s VCC = 400V, T j  150C - - - 4620 288 137 470 13 687.5 - pF - nC - nH -A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.7 10.01.2018 IGW75N60T TRENCHSTOP™ Series q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy1) Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=25C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T min. - Value Typ. 33 36 330 35 2.0 2.5 4.5 Unit max. - ns - mJ - Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy1) Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=175C, VCC=400V,IC=75A, VGE=0/15V, rG=5, L=100nH, C=39pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW75N60T min. - Value Typ. 32 37 363 38 2.9 2.9 5.8 Unit max. - ns - mJ - IFAG IPC TD VLS 3 Rev. 2.7 10.01.2018 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IGW75N60T TRENCHSTOP™ Series q 200A 150A 100A TC=80°C TC=110°C 50A 0A 10Hz Ic Ic 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 5) 100A t =1µs p 10µs 50µs 10A 1ms 10ms DC 1A 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT 400W 350W 300W 250W 200W 150W 100W 50W 0W 25°C 50°C 75°C 100°C 125°C 150°C Figure 3. TC, CASE TEMPERATURE Power dissipation as a function of case temperature (Tj  175C) 120A 90A 60A 30A 0A 25°C 75°C 125°C Figure 4. TC, CASE TEMPERATURE DC Collector current as a function of case temperature (VGE  15V, Tj  175C) IFAG IPC TD VLS 4 Rev. 2.7 10.01..


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