28F256P30B

Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to 64 user-programmable OTP bits data output synchronous-burst read mode Additional 2048 user-programmable OTP bits — 25 ns asynchronous-page read mode — Selectable OTP Space in Main Array: — 4-, 8-, 16-, and continuous-word burst mode 4x32KB parameter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (top or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write protection: VPP = VSS — 1.8 V buffered programming at 7 µs/byte (Typ) — Power-transition erase/program lockout ■ Architecture — Individual zero-latency block locking — Multi-Level Cell Technology: Highest Density — Individual block lock-down at Lowest Cost ■ Software — Asymmetrically-blocked architecture — 20 µs (Typ) program suspend — Four 32-KByte parameter blocks: top or — 20 µs (Typ) erase suspend bottom configuration — Intel® Flash Data Integrator optimized — 128-KByte main blocks — Basic Command Set and Extended Command ■ Voltage and Power Set compatible — VCC (core) voltage: 1.7 V – 2.0 V — Common Flash Interface capable — VCCQ (I/O) voltage: 1.7 V – 3.6 V ■ Density and Packaging — Standby current: 55 µA (Typ) for 256-Mbit — 64/128/256-Mbit densities in 56-Lead TSOP — 4-Word synchronous read current: package 13 mA (...