FCPF9N60NT

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT N-Channel MOSFET 600V, 9A, 0.385Ω Features RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A Ultra low gate charge ( Typ. Qg = 22nC) Low effective output capacitance 100% avalanche tested RoHS compliant TM SupreMOS tm August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) (Note 3) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) -Continuous (TC = 25oC) FCP9N60N FCPF9N60NT 600 ±30 9.0* 5.7* 27* 135 3 0.83 100 20 Units V V A A mJ A mJ V/ns V/ns ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL 9.0 5.7 27 83.3 0.67 300 29.8 0.24 -55 to +1...