FDB039N06

FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features RDS(on) = 2.95mΩ ( Typ.) @ VGS = 10V, ID = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol www.DataSheet4U.com VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Parameter Ratings 60 ±20 -Continuous (TC = 25oC, Silicion Limited) -Continuous (TC = 100oC, Silicion Limited) -Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) 174* 123* 120 696 872 7.0 231 1.54 -55 to +175 300 A mJ V/ns W W/oC o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C oC *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol R...