FDB12N50TM

FDB12N50TM — N-Channel UniFETTM MOSFET FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID = 6 A Low Gate Charge (Typ. 22 nC) Low Crss (Typ. 12 pF) 100% Avalanche Tested RoHS Compliant Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G S D2-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max The...