Document
FDB12N50U N-Channel MOSFET
March 2008
FDB12N50U
N-Channel MOSFET, FRFET
500V, 10A, 0.8Ω Features
• RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
Ultra FRFET
tm
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
D
G S
TO-263AB
FDB Series
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS www.DataSheet4U.com V
GSS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) -Continuous (TC = 25oC)
Ratings 500 ±30 10 6 40 456 10 16.5 4.5 165 1.33 -55 to +150 300
Units V V A A mJ A mJ V/ns W W/oC
o o
ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.75 62.5 Units
o
C/W
©2007 Fairchild Semiconductor Corporation FDB12N50U Rev. A2
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www.fairchildsemi.com
FDB12N50U N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDB12N50U Device FDB12N50UTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.7 25 250 ±100 V V/oC µA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VDS = 40V, ID = 5A
(Note 4)
3.0 -
0.65 11
5.0 0.8 -
V Ω S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
1050 140 11 21 6 9
1395 190 1.