DatasheetsPDF.com

FDB12N50U Dataheets PDF



Part Number FDB12N50U
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB12N50U DatasheetFDB12N50U Datasheet (PDF)

FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especial.

  FDB12N50U   FDB12N50U



Document
FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D D G S TO-263AB FDB Series D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) -Continuous (TC = 25oC) Ratings 500 ±30 10 6 40 456 10 16.5 4.5 165 1.33 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.75 62.5 Units o C/W ©2007 Fairchild Semiconductor Corporation FDB12N50U Rev. A2 1 www.fairchildsemi.com FDB12N50U N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDB12N50U Device FDB12N50UTM_WS Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.7 25 250 ±100 V V/oC µA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VDS = 40V, ID = 5A (Note 4) 3.0 - 0.65 11 5.0 0.8 - V Ω S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 10A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 1050 140 11 21 6 9 1395 190 1.


FDB12N50TM FDB12N50U FDB3860


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)