FDB3860 N-Channel PowerTrench® MOSFET
March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s ad...
