FDU5N53

FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 FDD5N53/FDU5N53 N-Channel MOSFET 530V, 4A, 1.5Ω Features RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A Low gate charge ( Typ. 11nC) Low Crss ( Typ. 5pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G S D G D-PAK FDD Series G D S I-PAK FDU Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDD5N53/FDU5N53 530 ±30 4 2.4 16 256 4 4 4.5 40 0.3 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Pur...