FDD6770A

FDD6770A N-Channel PowerTrench® MOSFET January 2009 FDD6770A N-Channel PowerTrench® MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 24 A „ Max rDS(on) = 8.0 mΩ at VGS = 4.5 V, ID = 18.4 A „ 100% UIL tested „ RoHS Compliant Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G S D-PAK TO -252 (TO-252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.com Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 50 97 24 200 50 50 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 40 °C/W Package Marking and Ordering Information Device Marking FDD6770A Device FDD6770A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 ...