N-Channel MOSFET
FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET
January 2009
FDD6776A / FDU6776A_F071
N-Channel PowerTrench® M...
Description
FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET
January 2009
FDD6776A / FDU6776A_F071
N-Channel PowerTrench® MOSFET
25 V, 7.5 mΩ Features General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A Max rDS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A 100% UIL test RoHS Compliant
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheet4U.com Symbol VDS
VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 30 54 17.7 100 32 39 3.7 -55 to +175 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.8 40 °C/W
Package Marking and Ordering Information
Device Marking FDD6776A FDU6776A Device FDD6776A FDU6776A_F071 Pa...
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