FDG1024NZ Dual N-Channel Power Trench® MOSFET
August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 mΩ
Features
Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A HBM ESD protection level...
