FDG410NZ

FDG410NZ Single N-Channel PowerTrench® MOSFET FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ March 2009 Features General Description „ Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A „ Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A „ Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A „ Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A „ HBM ESD protection level > 2 kV (Note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Fast switching speed This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package. Applications „ DC/DC converter „ Power management „ Load switch „ Low gate charge „ RoHS Compliant DS D G D D D1 D2 G3 6D 5D 4S SC70-6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed TA = 25 °C Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 2.2 6.0 0.42 0.38 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking a...