FDL100N50F

FDL100N50F N-Channel MOSFET FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A Low gate charge ( Typ. 238nC) Low Crss ( Typ. 64pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant UniFETTM May 2009 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-264 G D S FDL Series o S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDL100N50F 500 ±30 100 60 400 5000 100 73.5 20 2500 20 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5...