FDMC7664

FDMC7664 N-Channel PowerTrench® MOSFET FDMC7664 N-Channel PowerTrench® MOSFET 30 V, 18.8 A, 4.2 mΩ June 2014 Features General Description „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A „ Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications „ DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Bottom Pin 1 S SG S MLP 3.3x3.3 D D D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 24 18.8 60 188 45 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.8 (Note 1a) 53 °C/W Device Marking FDM...