N-Channel MOSFET. FDMC7692 Datasheet

FDMC7692 Datasheet PDF, Equivalent


Part Number

FDMC7692

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC7692 Datasheet PDF


FDMC7692 Datasheet
July 2009
FDMC7692
N-Channel Power Trench® MOSFET
30 V, 13.3 A, 8.5 m:
Features
General Description
„ Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A
„ Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TA
=
25
°C
unless
otherwise
noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
16
13.3
40
58
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
53
°C/W
Device Marking
FDMC7692
Device
FDMC7692
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC7692 Rev.B
1
www.fairchildsemi.com

FDMC7692 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
30
V
ID = 250 PA, referenced to 25 °C
16 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
1
PA
250
100 nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 13.3 A
VGS = 4.5 V, ID = 10.6 A
VGS = 10 V, ID = 13.3 A, TJ = 125 °C
VDD = 5 V, ID = 13.3 A
1.2
1.9 3.0 V
-6 mV/°C
7.2 8.5
9.5 11.5 m:
9.5 12.0
60 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1260
480
65
0.9
1680
635
100
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
www.DataShDereat4iUn.-cSomource Diode Characteristics
VDD = 15 V, ID = 13.3 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 13.3 A
9 18 ns
4 10 ns
21 33 ns
3 10 ns
21 29 nC
10 20 nC
5 nC
3 nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 13.3 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.86 1.2
0.75 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.3 A, di/dt = 100 A/Ps
24 38 ns
7 14 nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A.
©2009 Fairchild Semiconductor Corporation
FDMC7692 Rev.B
2
www.fairchildsemi.com


Features Datasheet pdf FDMC7692 N-Channel Power Trench® MOSFET July 2009 FDMC7692 30 V, 13.3 A, 8.5 m: Features „ Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A „ Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A „ High performance technology for extr emely low rDS(on) „ Termination is Lea d-free and RoHS Compliant N-Channel Po wer Trench® MOSFET General Description This N-Channel MOSFET is produced usin g Fairchild Semiconductor’s advanced Power Trench® process that has been es pecially tailored to minimize the on-st ate resistance. This device is well sui ted for Power Management and load switc hing applications common in Notebook Co mputers and Portable Battery Packs. Ap plication „ DC - DC Buck Converters „ Notebook battery power management „ L oad switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 www.Da taSheet4U.com Symbol VDS VGS ID EAS PD TJ, TSTG MOSFET Maximum Ratings TA = 2 5 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Sourc.
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