FDMC8296

FDMC8296 N-Channel Power Trench® MOSFET FDMC8296 N-Channel Power Trench® MOSFET 30V, 18A, 8.0m: June 2014 Features General Description „ Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A „ Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A „ High performance trench technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application „ DC - DC Buck Converter „ Notebook battery power management „ Load switch in Notebook Top Bottom S SG S MLP 3.3x3.3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous TC = 25°C TA = 25°C -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C Operating and Storage Junction Temperature Range (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 18 12 52 72 27 2.3 -55 to +150 Units V V A mJ W °C Thermal Characteristics RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDMC8296 Device FDMC8296 Package MLP 3.3X3.3 4.6 ...