N-Channel MOSFET. FDMS7660 Datasheet

FDMS7660 Datasheet PDF, Equivalent


Part Number

FDMS7660

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS7660 Datasheet


FDMS7660 Datasheet
FDMS7660
N-Channel PowerTrench® MOSFET
30 V, 2.8 m
Features
„ Max rDS(on) = 2.8 mat VGS = 10 V, ID = 25 A
„ Max rDS(on) = 3.5 mat VGS = 4.5 V, ID = 19 A
„ Advanced Package and Silicon combination for low rDS(on) and
high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
April 2009
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
www.DataShMeeOt4US.cFoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
144
25
150
128
78
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS7660
Device
FDMS7660
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev. D
1
www.fairchildsemi.com

FDMS7660 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
17 mV/°C
1 µA
100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V , ID = 25 A
VGS = 4.5 V, ID = 19 A
VGS = 10 V, ID = 25 A, TJ = 125 °C
VDS = 5 V, ID = 25 A
1.25
1.9
-7
1.9
2.7
2.5
250
3.0 V
mV/°C
2.8
3.5 m
3.7
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4185
1380
125
0.9
5565
1830
190
2.0
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 25A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 25 A
17
9
37
7
60
27
12.3
7.2
31
18
60
13
84
38
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
www.DataShVeSeDt4U.com Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 25 A
(Note 2)
(Note 2)
0.7 0.95
0.8 1.1
V
trr Reverse Recovery Time
46 74 ns
Qrr Reverse Recovery Charge
26 42 nC
ta Reverse Recovery Fall Time
IF = 25 A, di/dt = 100 A/µs
19 nC
tb Reverse Recovery Rise Time
27 nC
S Softness (tb/ta)
1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 25 A, di/dt = 300 A/µs
36 58 ns
43 68 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 128 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 23 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev. D
2
www.fairchildsemi.com


Features Datasheet pdf FDMS7660 N-Channel PowerTrench® MOSFET April 2009 FDMS7660 N-Channel PowerTr ench® MOSFET 30 V, 2.8 mΩ Features G eneral Description This N-Channel MOSFE T has been designed specifically to imp rove the overall efficiency and to mini mize switch node ringing of DC/DC conve rters using either synchronous or conve ntional switching PWM controllers. It h as been optimized for low gate charge, low rDS(on), fast switching speed and b ody diode reverse recovery performance. „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next ge neration enhanced body diode technology , engineered for soft recovery. Provide s Schottky-like performance with minimu m EMI in sync buck converter applicatio ns „ MSL1 robust package design „ 100 % UIL tested „ RoHS Compliant Applica tions „ IMVP Vcore Switching for Noteb ook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-.
Keywords FDMS7660, datasheet, pdf, Fairchild Semiconductor, N-Channel, MOSFET, DMS7660, MS7660, S7660, FDMS766, FDMS76, FDMS7, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)