FDMS7660AS

FDMS7660AS N-Channel PowerTrench® SyncFETTM September 2009 FDMS7660AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 2.4 mΩ Features General Description „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 2.6 mΩ at VGS = 7 V, ID = 23 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore/ GPU low side switch „ Networking Point of Load low side switch „ Telecom secondary side rectification Top Bottom Pin 1 S D5 4G S S G D6 3S Power 56 D D DD D7 D8 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID dv/dt EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C MOSFET dv/dt Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3)...