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FDMS7672 Dataheets PDF



Part Number FDMS7672
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMS7672 DatasheetFDMS7672 Datasheet (PDF)

FDMS7672 N-Channel PowerTrench® MOSFET FDMS7672 N-Channel PowerTrench® MOSFET 30 V, 5.0 mΩ Features „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A „ Advanced Package and Silicon design for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compli.

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FDMS7672 N-Channel PowerTrench® MOSFET FDMS7672 N-Channel PowerTrench® MOSFET 30 V, 5.0 mΩ Features „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A „ Advanced Package and Silicon design for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant October 2014 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S D D D D Power 56 D7 D8 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 28 80 19 90 72 48 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.6 (Note 1a) 50 °C/W Device Marking FDMS7672 Device FDMS7672 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2009 Fairchild Semiconductor Corporation 1 FDMS7672 Rev.D1 www.fairchildsemi.com FDMS7672 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V V 15 mV/°C 1 µA 100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 µA 1.25 2.0 ID = 250 µA, referenced to 25 °C -7 VGS = 10 V, ID = 19 A 3.6 VGS = 4.5 V, ID = 15 A 5.2 VGS = 10 V, ID = 19 A, TJ = 125 °C 4.9 VDS = 5 V, ID = 19 A 64 3.0 V mV/°C 5.0 6.9 mΩ 6.8 S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2225 2960 pF 685 910 pF 90 130 pF 0.7 1.5 Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 15 V, ID = 19 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V, ID = 19 A 13 23 ns 5 10 ns 25 40 ns 4 10 ns 31 44 nC 14 19 nC 7.6 nC 3.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 19 A (Note 2) (Note 2) 0.7 0.95 V 0.8 1.1 trr Reverse Recovery Time 32 51 ns Qrr Reverse Recovery Charge 14 24 nC ta Reverse Recovery Fall Time IF = 19 A, di/dt = 100 A/µs 15 nC tb Reverse Recovery Rise Time 17 nC S Softness (tb/ta) 1.1 trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 19 A, di/dt = 300 A/µs 26 42 ns 25 40 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7672 Rev. D1 2 www.fairchildsemi.com FDMS7672 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID, DRAIN CURRENT (A) 90 VGS = 10 V VGS = 5 V VGS = 4 V 60 PULSE DURATION =.


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