Document
FDMS7672 N-Channel PowerTrench® MOSFET
FDMS7672
N-Channel PowerTrench® MOSFET
30 V, 5.0 mΩ
Features
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A Advanced Package and Silicon design for low rDS(on) and high
efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
October 2014
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook VRM Vcore Switching for Desktop and Server OringFET / Load Switch DC-DC Conversion
Top
Bottom
Pin 1 S
S S G
D5 D6
4G 3S
D D D D
Power 56
D7 D8
2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 28 80 19 90 72 48 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.6
(Note 1a)
50
°C/W
Device Marking FDMS7672
Device FDMS7672
Package Power 56
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2009 Fairchild Semiconductor Corporation
1
FDMS7672 Rev.D1
www.fairchildsemi.com
FDMS7672 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
30
∆BVDSS ∆TJ
Breakdown Voltage Temperature Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
V
15
mV/°C
1
µA
100
nA
On Characteristics
VGS(th)
∆VGS(th) ∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 µA
1.25
2.0
ID = 250 µA, referenced to 25 °C
-7
VGS = 10 V, ID = 19 A
3.6
VGS = 4.5 V, ID = 15 A
5.2
VGS = 10 V, ID = 19 A, TJ = 125 °C
4.9
VDS = 5 V, ID = 19 A
64
3.0
V
mV/°C
5.0
6.9
mΩ
6.8
S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 15 V, VGS = 0 V, f = 1 MHz
2225 2960
pF
685
910
pF
90
130
pF
0.7
1.5
Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 15 V, ID = 19 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V,
ID = 19 A
13
23
ns
5
10
ns
25
40
ns
4
10
ns
31
44
nC
14
19
nC
7.6
nC
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 19 A
(Note 2) (Note 2)
0.7
0.95
V
0.8
1.1
trr
Reverse Recovery Time
32
51
ns
Qrr
Reverse Recovery Charge
14
24
nC
ta
Reverse Recovery Fall Time
IF = 19 A, di/dt = 100 A/µs
15
nC
tb
Reverse Recovery Rise Time
17
nC
S
Softness (tb/ta)
1.1
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 19 A, di/dt = 300 A/µs
26
42
ns
25
40
nC
Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7672 Rev. D1
2
www.fairchildsemi.com
FDMS7672 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ID, DRAIN CURRENT (A)
90 VGS = 10 V
VGS = 5 V
VGS = 4 V
60
PULSE DURATION =.