N-Channel MOSFET. FDMS7680 Datasheet

FDMS7680 Datasheet PDF, Equivalent


Part Number

FDMS7680

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS7680 Datasheet


FDMS7680 Datasheet
FDMS7680
N-Channel PowerTrench® MOSFET
30 V, 6.9 m
Features
General Description
April 2009
„ Max rDS(on) = 6.9 mat VGS = 10 V, ID = 14 A
„ Max rDS(on) = 11 mat VGS = 4.5 V, ID = 11 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery.
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
+/-20
28
53
14
80
29
33
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS7680
Device
FDMS7680
Package
Power 56
(Note 1a)
3.7
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
1
www.fairchildsemi.com

FDMS7680 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
13
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V , ID = 14 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 14 A, TJ = 125 °C
VDS = 5 V, ID = 14 A
1.25
1.9
-6
5.6
8.0
7.3
85
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1390
430
60
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 14 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 14 A
10
4
21
3
20
9
4.6
2.3
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 14 A
(Note 2)
(Note 2)
IF = 14 A, di/dt = 100 A/µs
IF = 14 A, di/dt = 300 A/µs
0.74
0.83
24
8
20
15
Max Units
V
mV/°C
1 µA
100 nA
3.0 V
mV/°C
6.9
11 m
10.1
S
1850
575
85
2.0
pF
pF
pF
20 ns
10 ns
34 ns
10 ns
28 nC
13
nC
nC
1.2
V
1.3
39 ns
15 nC
36 ns
27 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
©2008 Fairchild Semiconductor Corporation
FDMS7680 Rev.C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS7680 N-Channel PowerTrench® MOSFET April 2009 FDMS7680 N-Channel PowerTr ench® MOSFET 30 V, 6.9 mΩ Features G eneral Description This N-Channel MOSFE T has been designed specifically to imp rove the overall efficiency and to mini mize switch node ringing of DC/DC conve rters using either synchronous or conve ntional switching PWM controllers. It h as been optimized for low gate charge, low rDS(on), fast switching speed and b ody diode reverse recovery performance. „ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A „ Advanced P ackage and Silicon combination for low rDS(on) and high efficiency „ Next gen eration enhanced body diode technology, engineered for soft recovery. „ MSL1 robust package design „ 100% UIL teste d „ RoHS Compliant Applications „ IM VP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conv ersion Top Bottom S Pin 1 S D S G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 5.
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