ST3401

P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z -30V/-4.0A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 50mΩ @VGS = -4.5V -30V/-1.2A, RDS(ON) = 60mΩ @VGS = -2.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.Gate 2.Source S 2 z 3.Drain z z z z PART MARKING SOT-23-3L www.DataSheet4U.com 3 A1YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number ST3401S23RG Package SOT-23-3L Part Marking A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP3401 2005. V1 P Channel Enhancement Mode MOSFET ST3401 -4.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Cont...