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OMD500 Dataheets PDF



Part Number OMD500
Manufacturers Omnirel
Logo Omnirel
Description (OMD100 - OMD500) FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE
Datasheet OMD500 DatasheetOMD500 Datasheet (PDF)

OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high re.

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OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PER TRANSISTOR @ 25°C www.DataSheet4U.com PART NUMBER OMD100 OMD200 OMD400 OMD500 VDS 100V 200V 400V 500V RDS(on) .08 .11 .35 .43 ID 25A 25A 13A 11A 3.1 SCHEMATIC CONNECTION DIAGRAM FET 4 G S D FET 3 G S D 1.520 .150 .500 MIN. .260 1.000 SQ. 45° REF .170 R. TYP. .156 DIA. TYP. .040 LEAD DIA. D S G G S D .187 TYP. .125 (10 PLCS) .625 .050 .270 FET 1 FET 3 4 11 R2 Supersedes 1 07 R1 3.1 - 1 3.1 OMD100 - OMD500 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS: STATIC P/N OMD100 (100V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2 (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N OMD200 (200V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2 (TC = 25°C unless otherwise noted) Min. Typ. Max. Units Test Conditions 100 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 1.60 V VGS = 0, ID = 250 mA VGS = +20 V VGS = -20 V Min. Typ. Max. Units Test Conditions 200 2.0 4.0 100 -100 0.25 1.0 V V nA nA mA mA A 1.36 1.76 .085 .110 0.14 .200 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = + 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C VDS = VGS, ID = 250 mA VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C .065 .080 .10 .160 gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 9.0 10 2700 1300 470 28 45 100 50 S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V (MOSFET switching times are essentially independent of operating temperature.) gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 10.0 12.5 2400 600 250 25 60 85 38 S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V (MOSFET switching times are essentially independent of operating temperature.) BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 - 30 - 120 -2 TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms VSD trr ns 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) A A V (W ) 3.1 - 2 DYNAMIC DYNAMIC Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms www.DataSheet4U.com ELECTRICAL CHARACTERISTICS: STATIC P/N OMD400 (400V) Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2.0 0.30 .60 0.1 0.2 (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STA.


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