Document
OMD100 OMD400 OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package
FEATURES
• • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR @ 25°C
www.DataSheet4U.com
PART NUMBER OMD100 OMD200 OMD400 OMD500
VDS 100V 200V 400V 500V
RDS(on) .08 .11 .35 .43
ID 25A 25A 13A 11A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET 4 G S D
FET 3 G S D
1.520
.150 .500 MIN.
.260 1.000 SQ. 45° REF
.170 R. TYP. .156 DIA. TYP. .040 LEAD DIA.
D
S
G
G
S
D
.187 TYP.
.125 (10 PLCS) .625
.050 .270
FET 1
FET 3
4 11 R2 Supersedes 1 07 R1
3.1 - 1
3.1
OMD100 - OMD500
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD100 (100V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1.1 0.1 0.2
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD200 (200V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0.1 0.2
(TC = 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions 100 2.0 4.0 100 - 100 0.25 1.0 V V nA nA mA mA A 1.60 V VGS = 0, ID = 250 mA VGS = +20 V VGS = -20 V
Min. Typ. Max. Units Test Conditions 200 2.0 4.0 100 -100 0.25 1.0 V V nA nA mA mA A 1.36 1.76 .085 .110 0.14 .200 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = + 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A VGS = 10 V, ID = 16 A, TC = 125 C
VDS = VGS, ID = 250 mA
VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TC = 125 C
.065 .080 .10 .160
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
9.0
10 2700 1300 470 28 45 100 50
S(W ) VDS 2 VDS(on), ID = 20 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID @ 20 A Rg = 5.0 W , VG = 10V
(MOSFET switching times are essentially independent of operating temperature.)
gfs Ciss Coss Crss td(on) tr td(off) tf
Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
10.0 12.5 2400 600 250 25 60 85 38
S(W ) VDS 2 VDS(on), ID = 16 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 16 A Rg = 5.0 W ,VGS = 10V
(MOSFET switching times are essentially independent of operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400 - 40 - 160 - 2.5 A A V ns
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM
S
Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350
- 30 - 120 -2
TC = 25 C, IS = -40 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
VSD trr
ns
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(W ) A A V
(W )
3.1 - 2
DYNAMIC
DYNAMIC
Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
G
D
S
TC = 25 C, IS = -30 A, VGS = 0 TJ = 150 C, IF = IS, dlF/ds = 100 A/ms
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD400 (400V)
Parameter BVDSS VGS(th) IGSSF IGSSR IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) VDS(on) RDS(on) RDS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 15 2.0 0.30 .60 0.1 0.2
(TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STA.