MSB709-RT1

MSB709-RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current – Continuous Collector Current – Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value –60 –45 –7.0 –100 –200 Unit Vdc Vdc Vdc mAdc mAdc 2 BASE 1 EMITTER http://onsemi.com COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 –55 ~ +150 Unit mW °C °C 3 2 1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 mAdc, IE = 0) www.DataSheet4U.com Collector–Base Cutoff Current (VCB = –45 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCE = –10 Vdc, IB = 0) DC Current Gain (Note 1) (VCE = –10 Vdc, IC = –2.0 mAdc) Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min –45 –60 –7.0 – – 210 – Max – – – –0.1 –100 340 –0.5 Unit Vdc SC–59 SUFFIX CASE 318D MARKING DIAGRAM Vdc Vdc AR M mAdc nAdc – Vdc Preferred devices are recommended choices for future use and best overall value. AR = Specific Device Code M = Date Code 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. © Semiconductor Components Industries, LLC, 2002 1 May, 2002 – Rev. 5 Publication Order Number...