N-Channel MOSFET. FDP8440 Datasheet

FDP8440 Datasheet PDF, Equivalent


Part Number

FDP8440

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDP8440 Datasheet


FDP8440 Datasheet
January 2009
FDP8440
N-Channel PowerTrench® MOSFET
40V, 277A, 2.2mΩ
Features
• RDS(on) = 1.64mΩ (Typ.)@ VGS = 10V, ID = 80A
• Qg(tot) = 345nC (Typ.)@ VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
tm
D
GDS
TO-220
FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
www.DataSheSeyt4mU.bcooml
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-
-
-
Continuous
Continuous
Continuous
(TC
(TC
(TC
=
=
=
25oC, Silicon Limited)
100oC, Silicon Limited)
25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
40
±20
277*
196*
100
500
1682
306
2.04
-55 to +175
300
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.49
0.5
62.5
Units
V
V
A
A
mJ
W
W/oC
oC
oC
oC/W
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FDP8440 Rev. A6
1
www.fairchildsemi.com

FDP8440 Datasheet
Package Marking and Ordering Information
Device Marking
FDP8440
Device
FDP8440
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Quantity
50units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS = 0V, ID = 250μA
VDS = 32V
VGS = 0V
VGS = ±20V
TC = 150oC
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 80A
VGS = 10V, ID = 80A
VTCGS==17150oVC, ID = 80A,
Ciss
Coss
Crss
RG
Qg(tot)
Qg(2)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 20V
ID = 80A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON Turn-On Time
w w w .td(Don) a t a TuSrn-hOneDeelayt T4imeU . c o m
tr Rise Time
td(off)
Turn-Off Delay Time
VDD = 20V,ID = 80A
VGS = 10V, RGEN = 7Ω
tf Fall Time
tOFF Turn-Off Time
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 80A
ISD = 40A
ISD = 75A, dISD/dt = 100A/μs
ISD = 75A, dISD/dt = 100A/μs
Min Typ Max Units
40 --
-- --
-- V
1 μA
-- -- 250 μA
-- -- ±100 nA
1 -- 3 V
-- 1.88 2.4
--
1.64 2.2
mΩ
-- 3.00 4.4
-- 18600 24740 pF
--
1840 2450
pF
--
1400 2100
pF
-- 1.1 --
Ω
-- 345 450 nC
-- 32.5 --
nC
-- 49 -- nC
-- 16.5 --
nC
-- 74 -- nC
--
175 360
ns
-- 43 95 ns
--
130 275
ns
--
435 875
ns
--
290 590
ns
--
730 1470
ns
-- -- 1.25 V
-- -- 1.0 V
-- 59 -- ns
-- 77 -- nC
NOTES:
1: Pulse width limited by maximum junction temperature.
2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
FDP8440 Rev. A6
2 www.fairchildsemi.com


Features Datasheet pdf FDP8440 N-Channel PowerTrench® MOSFET January 2009 FDP8440 N-Channel PowerTr ench® MOSFET 40V, 277A, 2.2mΩ Feature s • RDS(on) = 1.64mΩ (Typ.)@ VGS = 1 0V, ID = 80A • Qg(tot) = 345nC (Typ.) @ VGS = 10V • Low Miller Charge • L ow QRR Body Diode • UIS Capability (S ingle Pulse and Repetitive Pulse) • R oHS Compliant tm Application • Auto motive Engine Control • Powertrain Ma nagement • Motors, Solenoids • Elec tronic Steering • Integrated Starter/ Alternator • Distributed Power Archi tectures and VRMs • Primary Switch fo r 12V Systems D G D S TO-220 FDP Ser ies G S MOSFET Maximum Ratings T Sym bol www.DataSheet4U.com VDSS VGSS ID ID M EAS PD TJ, TSTG TL Drain Current Drai n to Source Voltage Gate to Source Volt age Drain Current C = 25oC unless oth erwise noted Parameter Ratings 40 ±2 0 Units V V A A mJ W W/oC o - Continu ous (TC = 25oC, Silicon Limited) - Cont inuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (TC = 25oC) - Derate above 25 oC 277* 196* 1.
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