N-Channel MOSFET
FDP8447L N-Channel PowerTrench® MOSFET
FDP8447L
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
May 2007
tm
Features
G...
Description
FDP8447L N-Channel PowerTrench® MOSFET
FDP8447L
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
May 2007
tm
Features
General Description
Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
GD S
TO-220 FDP Series
G S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25°C TC = 25°C TA = 25°C
Drain-Source Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1) (Note 3) (Note 1)
Ratings 40 ±20 50 65 12 100 153 60 2
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.1
(Note 1)
62.5
°C/W
Device Marking FDP8447L
Device FDP8447L
Package TO-220AB
Reel Size Tube
Tape Width N/A
Quantity 50units
©2007 Fairchild Semiconductor Corporation
1
FDP8447L Rev.B
www.fairchildsemi.com
FDP8447L N-Channel PowerTrench® MOSFET
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