FDS8638

FDS8638 N-Channel PowerTrench® MOSFET FDS8638 N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ Features General Description March 2009 „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 40 ±20 18 100 541 2.5 1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 25 (Note 1a) 50 °C/W Device Marking FDS8638 Device FDS8638 Package SO-8 Reel Size 13 “ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation 1 FDS8638 Rev.C www.fairchildsemi.com FDS8638 N-Channel PowerTre...