FDS8672S

FDS8672S N-Channel PowerTrench® SyncFET™ December 2007 FDS8672S N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ Features „ Max rDS(on) = 4.8mΩ at VGS = 10V, ID = 18A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Includes SyncFET Schottky body diode „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ 100% Rg (Gate Resistance) tested „ Termination is Lead-free and RoHS Compliant ® ™ General Description tm The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. Application „ Synchronous Rectifier for DC/DC Converters „ Notebook Vcore low side switch „ Point of load low side switch D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G www.DataSheet4U.com MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25°C TA = 25°C (Note 3) (Note 1a) (Note 1b) Ratings 30 ±20 18 80 216 2.5 1.0 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Character...