FDS8882 N-Channel PowerTrench® MOSFET
FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features
General Description
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on)
and fast switching
High power and current handling capa...
