FGA30N120FTD

FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT April 2013 FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features Field Stop Trench Technology High Speed Switching Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A High Input Impedance Applications Solar Inverter, UPS, Welder, PFC General Description Using advanced field stop trench technology, Fairchild®’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven. C GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case ©2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. C0 1 G E Ratings 1200 ± 25 60 30 90 30 339 132 -55 to +150 -55 to +150 ...