SPP4435B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field ...
SPP4435B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter
FEATURES -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
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PART MARKING
2008/12/26
Ver.1
Page 1
SPP4435B
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION Part Number SPP4435BS8RGB Package SOP- 8P Part Marking SPP4435B
※ SPP4435BS8RGB : 13”Tape Reel ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage
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Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA
Typical -30 ±20
Unit
V V A A A W ℃ ℃ ℃/W
Gate –Source Voltage Continuous Dra...