SPP47N10

Preliminary data SPI47N10 SPP47N10,SPB47N10 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 33 47 P-TO220-3-1 V m
A Type SPP47N10 SPB47N10 SPI47N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4183 Q67040-S4173 tbd Marking 47N10 47N10 47N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous www.DataSheet4U.com TC=25°C TC=100°C Symbol drain current ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 188 400 17.5 6 ±20 175 -55... +175 55/175/56 2001-08-24 kV/µs V W °C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI47N10 SPP47N10,SPB47N10 Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)...