SPP4931

SPP4931 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4931 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-8.5A,RDS(ON)=20mΩ@VGS=-4.5V  -20V/-8.0 A,RDS(ON)=25mΩ@VGS=-2.5V  -20V/-5.0 A,RDS(ON)=35mΩ@VGS=-1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP-8 package design PIN CONFIGURATION(SOP–8) PART MARKING 2020/03/05 Ver.3 Page 1 SPP4931 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPP4931S8RGB SOP-8 ※ SPP4931S8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA...