SPP2301A

SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES  -20V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V  -20V/-2.0A,RDS(ON)=200mΩ@VGS=-2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/12 Ver.4 Page 1 SPP2301A P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number SPP2301AS23RGB Package SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP2301AS23RGB : Tape Reel ; Pb - Free ; Halogen - Free Part Marking 1A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source...