SPN8457

SPN8457 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8457 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  DC/DC Converter  LCD Display inverter FEATURES  30V/5.5A,RDS(ON)=58mΩ@VGS=10V  30V/4.0A,RDS(ON)=98mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-223 package design PIN CONFIGURATION(SOT-223) PART MARKING 2022/09/01 Ver.4 Page 1 SPN8457 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8457S22RGB SOT-223 ※ SPN8457S22RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking 8457 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resi...