SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field e...
SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS Power Management in Note book Powered System DC/DC Converter Load Switch
FEATURES 30V/40A,RDS(ON)=10mΩ@VGS=10V 30V/40A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-252-2L/TO-251S-3L package design
PIN CONFIGURATION TO-252-2L
TO-251S-3L
PART MARKING
2020/04/20 Ver.5
Page 1
SPN8882
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN8882T252RGB
TO-252-2L
SPN8882T251TGB
TO-251S-3L
※ SPN8882T252RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ SPN8882T251TGB : Tube ; Pb – Free ; Halogen – Free
Part Marking
SPN8882 SPN8882
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol VDSS
Gate –Source Voltage Continuous Drain Current Pulsed Drain Current
TA=25℃ TA=100℃
VGSS ID IDM
Continuous Drain Current
IS
Single Pulse Drain to Source Avalanche Energy − Starting (...