SPN7510

SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) www.DataSheet4U.com PART MARKING 2009/06/15 Ver.1 Page 1 SPN7510 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN7510T220TGB Package TO-220-3L Part Marking SPN7510 ※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter www.DataSheet4U.com Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM TA=25℃ TA=70℃ PD EAS TJ TSTG RθJA Typical 100 ±20 Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation V V A A W mJ 72 45 240 130 3.38 335 Avalanche Energy with Single Pulse ( Tj=25℃, L ...