SPN6099

SPN6099 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  60V/80A,RDS(ON)= 4.0mΩ@VGS= 10V  60V/40A,RDS(ON)= 4.2mΩ@VGS= 6.0V  60V/10A,RDS(ON)= 4.4mΩ@VGS= 4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L package design APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2016/03/28 Ver.2 Page 1 SPN6099 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN6099T220TGB TO-220-3L ※ SPN6099T220TGB: Tube ; Pb – Free; Halogen – Free Part Marking SPN6099 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Current Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12mH , IAS = 75A , VDD = 80V. ) Operating Junction Temperature Storage Temperatu...