SPN4920A

SPN4920A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP – 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOP – 8P) www.DataSheet4U.com PART MARKING 2007/ 09 / 30 Ver.1 Page 1 SPN4920A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN4920AS8RG SPN4920AS8TG ※ SPN4920AS8RG : 13” Tape Reel ; Pb – Free ※ SPN4920AS8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter www.DataSheet4U.com Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Package SOP- 8P SOP- 8P Part Marking SPN4920A SPN4920A Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 30 ±20 Unit Drain-S...