SPN4436

SPN4436 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch FEATURES  60V/8.0A,RDS(ON)=38mΩ@VGS=10V  60V/6.0A,RDS(ON)=44mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver.3 PART MARKING Page 1 SPN4436 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4436S8RGB SOP-8 ※ SPN4436S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free Part Marking SPN4436 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage VGSS ±20 V TA=25℃ 8.0 Continuous Drain Current(TJ=150℃) ID A TA=70℃ 7.2 Pulsed Drain Current IDM 35 A Avalanche Current IAS 15 A Power Dissipation (A) TA=25℃ 2.5 PD W TA=70℃ 1.6 Operating Junction Temperature TJ -55/150 ℃ Stora...