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Mode MOSFET. SPN4436 Datasheet

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Mode MOSFET. SPN4436 Datasheet






SPN4436 MOSFET. Datasheet pdf. Equivalent




SPN4436 MOSFET. Datasheet pdf. Equivalent





Part

SPN4436

Description

N-Channel Enhancement Mode MOSFET



Feature


SPN4436 N-Channel Enhancement Mode MOSFE T DESCRIPTION The SPN4436 is the N-Chan nel logic enhancement mode power field effect transistors are produced using h igh cell density , DMOS trench technolo gy. This high density process is especi ally tailored to minimize on-state resi stance. These devices are particularly suited for low voltage application , no tebook computer po.
Manufacture

SYNC POWER

Datasheet
Download SPN4436 Datasheet


SYNC POWER SPN4436

SPN4436; wer management and other battery powered circuits where high-side switching . A PPLICATIONS z DC/DC Converter z Load Sw itch FEATURES ‹ 60V/8.0A,RDS(ON)= 38m Ω@VGS= 10V ‹ 60V/6.0A,RDS(ON)= 44m℠¦@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Ex ceptional on-resistance and maximum DC current capability ‹ SOP – 8P packag e design PIN CONFIGURATION(S.


SYNC POWER SPN4436

OP – 8P) www.DataSheet4U.com PART MA RKING 2009 / 04 / 05 Ver.1 Page 1 SP N4436 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Sou rce Source Source Gate Drain Drain Drai n Drain ORDERING INFORMATION Part Numb er SPN4436S8RGB Package SOP- 8P Part Ma rking SPN4436 ※ SPN4436S8RGB : 13” Tape Reel ; Pb – Free ;.


SYNC POWER SPN4436

Halogen – Free ABSOULTE MAXIMUM RATI NGS (TA=25℃ Unless otherwise noted) P arameter Drain-Source Voltage www.DataS heet4U.com Symbol VDSS VGSS TA=25℃ T A=70℃ ID IDM IAS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 60 ±20 Unit V V A A A W ℃ ℃ ℃/W Gate –Sour ce Voltage Continuous Drain Current(TJ= 150℃) Pulsed Drain Current Avalanche Current Power Dissipation Operating Juncti.

Part

SPN4436

Description

N-Channel Enhancement Mode MOSFET



Feature


SPN4436 N-Channel Enhancement Mode MOSFE T DESCRIPTION The SPN4436 is the N-Chan nel logic enhancement mode power field effect transistors are produced using h igh cell density , DMOS trench technolo gy. This high density process is especi ally tailored to minimize on-state resi stance. These devices are particularly suited for low voltage application , no tebook computer po.
Manufacture

SYNC POWER

Datasheet
Download SPN4436 Datasheet




 SPN4436
SPN4436
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4436 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z DC/DC Converter
z Load Switch
FEATURES
‹ 60V/8.0A,RDS(ON)= 38mΩ@VGS= 10V
‹ 60V/6.0A,RDS(ON)= 44mΩ@VGS= 4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
2011/10/04 Ver.2
PART MARKING
Page 1




 SPN4436
SPN4436
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
Symbol
S
S
S
G
D
D
D
D
Description
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Part Number
SPN4436S8RGB
Package
SOP- 8P
※ SPN4436S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
TJ
TSTG
RθJA
Part Marking
SPN4436
Typical
60
±20
8.0
7.2
35
15
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃/W
2011/10/04 Ver.2
Page 2




 SPN4436
SPN4436
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=48V,VGS=0V
IDSS VDS=48V,VGS=0V
TJ=55℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=8A
VGS=4.5V,ID=6A
gfs VDS=15V,ID=5.3A
VSD IS=2.0A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=5V
ID= 5.3A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=6.8Ω
ID≡4.4A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
60 V
0.8 2.0
±100 nA
1
5 uA
30 A
0.034 0.038
0.038 0.044
Ω
24 S
0.8 1.2 V
10 15
3.5 nC
3.6
890
85 pF
48
10 15
12 20 nS
25 35
10 15
2011/10/04 Ver.2
Page 3



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