LFE18500X

DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 December 1994 Philips Semiconductors Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.8 GHz and 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LFE18500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (A) 0.2 PL1 (W) ≥48 Gpo (dB) ≥7 ηC (%) Z i ; ZL (Ω) typ. 42 see Figs 7 and 8 PINNING - FO-231 PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 2 3 e MAM045 - 1 Fig.1 Simplified outline and symbol....