SPN2318

SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  40V/3.9A,RDS(ON)=56mΩ@VGS=10V  40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V  40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design PIN CONFIGURATION ( SOT-23-3L ) PART MARKING 2020/11/03 Ver.3 Page 1 SPN2318 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2318S23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2318S23RGB : Tape Reel ; Pb – Free ; Halogen -Free Part Marking 18 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=...