H40N03E

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features RDS(on)=16mΩ@VGS=10V, ID=20A RDS(on)=25mΩ@VGS=4.5V, ID=20A Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation @ TC=25oC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH www.DataSheet4U.com Symbol VDS VGS ID IDM PD TJ,Tstg EAS RθJC RθJA Value 25 ±20 40 160 50 -55 to 150 300 2.1 55 Units V V A A W o C mJ O O Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)*2 C/W C/W *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board Switching Test Circuit VDD Switching Waveforms ton td(on) toff tr td(off) 90% tf 90 % VIN VGEN RG G D VOUT Output, VOUT 10% 10% Inverted 90% 50% 50% S Input, VIN 10% Pulse Width H40N03E HSMC Product Speci...