2SK1460LS

Ordering number : ENN3463B 2SK1460LS N-Channel Silicon MOSFET 2SK1460LS Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2078C [2SK1460LS] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 900 ±30 3.5 7 2.0 40 150 --55 to +150 Unit V V A A W W °C °C www.DataSheet4U.com Channel Temperature Storage Temperature Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=900V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=2A Ratings min 900 1.0 ±100 2.0 1.0 2.0 3.0 typ max Unit V mA nA V S Marking : K1460 0.6 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reaso...