NP80N03CDE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03EDE, NP80N03KDE NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE-E1-AY NP80N03KDE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N03CDE-S12-AZ NP80N03DDE-S12-AY NP80N03MDE-S18-AY NP80N03NDE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES Channel Temperature 175 degree rated www.DataSheet4U.com Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) Low input capacitance Ciss = 2600 pF TYP. (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional in...