2SK3402

SMD Type MOS Field Effect Transistor 2SK3402 TO-252 IC MOSFET Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low on-resistance +0.2 9.70-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss : Ciss = 3200 pF TYP. +0.15 0.50-0.15 RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18A) 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 36 144 40 1.0 150 -55 to +150 Unit V V A A W www.DataSheet4U.com Electrical Characteristics Ta = 25 Parameter Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=18A VGS=10V,ID=18A VGS=4.0V,ID=18A 1.5 13 2.0 27 12 15 3200 VDS=10V,VGS=0,f=1MHZ 520 270 36 ID=18A,VGS(on)=10V,RG=10 ,VDD=30V 310 170 180 61 ID =36A, VDD = 48 V, VGS = 10 V 8.2 17 15 22 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Ciss Coss Crss ton tr toff tf QG QGS QGD 3.8...