Document
2SK3446
Silicon N Channel Power MOS FET Power Switching
REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005
Features
• Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V)
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD)
D
G
1. Source 2. Drain 3. Gate
32
1
S
www.DataSheet4U.com
Rev.8.00 Sep 07, 2005 page 1 of 6
2SK3446
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 150 ±10 1 4 1 0.9 150 –55 to +150 Unit V V A A A W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time www.DataSheet4U.com Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 150 ±10 — — 0.5 — — 0.8 — — — — — — — — — — — — Typ — — — — — 1.5 1.9 1.4 98 31 14 3.5 0.5 1.8 8 12 34 19 1.0 60 Max — — ±10 1 1.5 1.95 2.5 — — — — — — — — — — — 1.5 — Unit V V µA µA V Ω Ω S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 4 V Note 3 ID = 0.5 A, VGS = 2.5 V Note 3 ID = 0.5 A, VDS = 10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 4 V ID = 1 A VGS = 4 V ID = 0.5 A RL = 60 Ω IF = 1 A, VGS = 0 IF = 1 A, VGS = 0 diF/dt = 100 A/µs
Rev.8.00 Sep 07, 2005 page 2 of 6
2SK3446
Main Characteristics
Power vs. Temperature Derating
Pch (W)
1.6 10 3
Maximum Safe Operation Area
10
PW
DC O
µs
ID (A)
100 µs
= 10 m s( 1s ho t)
c = 25
1.2
1 0.3 0.1 0.03 0.01 0.003
pe
1 ms
Channel Dissipation
Drain Current
0.8
ra
tio
n
(T
0.4
Operation in this area is limited by RDS(on)
°C
)
0 0
50
100
150
200
Ta = 25°C 0.001 0.1 0.3 1
3
10
30
100
500
Ambient Temperature
Ta (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
2.5 Pulse Test 2.5 V 2V 5
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
4V 3V
ID (A)
2.0
4
Tc = –25°C 25°C 75°C
1.5
3
Drain Current
1.0 VGS = 1.5 V
Drain Current
2
0.5
1
0 0 2 4 6 8 10
0
0
2
4
6
8
10
www.DataSheet4U.com Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
3 Pulse Test
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (Ω)
10 Pulse Test 5 VGS = 2.5 V 4V
2 ID = 1 A
2 1
1
0.5
0.5 A 0.2 A
0.2 0.1 0.1
0 0 2 4 6 8 10
0.3
1
3
10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.8.00 Sep 07, 2005 page 3 of 6
2SK3446
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
5 10 3 Tc = –25°C 1 25°C 0.3 0.1 0.03 0.01 0.01 0.03 75°C Pulse Test 0.2 A 0.5 A ID = 1 A VGS = 2.5 V 2 ID = 1 A 1 4V 0.5 A
Static Drain to Source on State Resistance RDS(on) (Ω)
Forward Transfer Admittance vs. Drain Current
4
3
0.2 A
VDS = 10 V Pulse Test 0.1 0.3 1 3 10
0 –25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
1000
Typical Capacitance vs. Drain to Source Voltage
1000 300 VGS = 0 f = 1 MHz Ciss 100 30 10 3 1 Crss
Reverse Recovery Time trr (ns)
100 30 10 3 1 0.1
Capacitance C (pF)
300
di / dt = 100 A / µs VGS = 0, Ta = 25°C
Coss
0.3
1
3
10
0
10
20
30
40
50
Reverse Drain Current
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IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 1 A 120
VDS
Switching Characteristics
VGS (V)
8 100 td(off) 30 tf 10 tr td(on)
160
6 VDD = 100 V 50 V 25 V 4 VGS
Drain to Source Voltage
80
40 VDD = 100 V 50 V 25 V 0 0 2 4 6 8 10
2
Gate to Source Voltage
Switching Time t (ns)
3 VGS = 4 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 1 0.1 0.3 1 3 10
0
Gate Charge
Qg (nC)
Drain Current
ID (A)
Rev.8.00 Sep 07, 2005 page 4 of 6
2SK3446
Reverse Drain Current vs. Source to Drain Voltage
4
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
1.5 VDS = 10 V Pulse Test ID = 10 mA 1.0
IDR (A)
Pulse Test
3
Reverse Drain Current
2 5V VGS = 0, –5 V 1
0.5
1 mA 0.1 mA
0 0 1 2
0 –25
0
25
50
75
.