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K3446 Dataheets PDF



Part Number K3446
Manufacturers Renesas Technology
Logo Renesas Technology
Description 2SK3446
Datasheet K3446 DatasheetK3446 Datasheet (PDF)

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S www.DataSheet4U.com Rev.8.00 Sep 07, 2005 page 1 of 6 2SK3446 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source volt.

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2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S www.DataSheet4U.com Rev.8.00 Sep 07, 2005 page 1 of 6 2SK3446 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 150 ±10 1 4 1 0.9 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time www.DataSheet4U.com Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 150 ±10 — — 0.5 — — 0.8 — — — — — — — — — — — — Typ — — — — — 1.5 1.9 1.4 98 31 14 3.5 0.5 1.8 8 12 34 19 1.0 60 Max — — ±10 1 1.5 1.95 2.5 — — — — — — — — — — — 1.5 — Unit V V µA µA V Ω Ω S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 4 V Note 3 ID = 0.5 A, VGS = 2.5 V Note 3 ID = 0.5 A, VDS = 10 V Note 3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 4 V ID = 1 A VGS = 4 V ID = 0.5 A RL = 60 Ω IF = 1 A, VGS = 0 IF = 1 A, VGS = 0 diF/dt = 100 A/µs Rev.8.00 Sep 07, 2005 page 2 of 6 2SK3446 Main Characteristics Power vs. Temperature Derating Pch (W) 1.6 10 3 Maximum Safe Operation Area 10 PW DC O µs ID (A) 100 µs = 10 m s( 1s ho t) c = 25 1.2 1 0.3 0.1 0.03 0.01 0.003 pe 1 ms Channel Dissipation Drain Current 0.8 ra tio n (T 0.4 Operation in this area is limited by RDS(on) °C ) 0 0 50 100 150 200 Ta = 25°C 0.001 0.1 0.3 1 3 10 30 100 500 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 2.5 Pulse Test 2.5 V 2V 5 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 4V 3V ID (A) 2.0 4 Tc = –25°C 25°C 75°C 1.5 3 Drain Current 1.0 VGS = 1.5 V Drain Current 2 0.5 1 0 0 2 4 6 8 10 0 0 2 4 6 8 10 www.DataSheet4U.com Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 3 Pulse Test Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 10 Pulse Test 5 VGS = 2.5 V 4V 2 ID = 1 A 2 1 1 0.5 0.5 A 0.2 A 0.2 0.1 0.1 0 0 2 4 6 8 10 0.3 1 3 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.8.00 Sep 07, 2005 page 3 of 6 2SK3446 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 5 10 3 Tc = –25°C 1 25°C 0.3 0.1 0.03 0.01 0.01 0.03 75°C Pulse Test 0.2 A 0.5 A ID = 1 A VGS = 2.5 V 2 ID = 1 A 1 4V 0.5 A Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance vs. Drain Current 4 3 0.2 A VDS = 10 V Pulse Test 0.1 0.3 1 3 10 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 Typical Capacitance vs. Drain to Source Voltage 1000 300 VGS = 0 f = 1 MHz Ciss 100 30 10 3 1 Crss Reverse Recovery Time trr (ns) 100 30 10 3 1 0.1 Capacitance C (pF) 300 di / dt = 100 A / µs VGS = 0, Ta = 25°C Coss 0.3 1 3 10 0 10 20 30 40 50 Reverse Drain Current www.DataSheet4U.com IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) ID = 1 A 120 VDS Switching Characteristics VGS (V) 8 100 td(off) 30 tf 10 tr td(on) 160 6 VDD = 100 V 50 V 25 V 4 VGS Drain to Source Voltage 80 40 VDD = 100 V 50 V 25 V 0 0 2 4 6 8 10 2 Gate to Source Voltage Switching Time t (ns) 3 VGS = 4 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 1 0.1 0.3 1 3 10 0 Gate Charge Qg (nC) Drain Current ID (A) Rev.8.00 Sep 07, 2005 page 4 of 6 2SK3446 Reverse Drain Current vs. Source to Drain Voltage 4 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 1.5 VDS = 10 V Pulse Test ID = 10 mA 1.0 IDR (A) Pulse Test 3 Reverse Drain Current 2 5V VGS = 0, –5 V 1 0.5 1 mA 0.1 mA 0 0 1 2 0 –25 0 25 50 75 .


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