600V (max) Switch-Mode MOSFETS
IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process ...
Description
IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
VDSS ID25 RDS(on) PDC
= = = =
600 V 18.0 A 0.44 Ω 880 W
Maximum Ratings 600 600 ±20 ±30 18 90 18 TBD V V V V A A A mJ
5 V/ns >200 V/ns
DRAIN
PDC PDHS PDAMB RthJC RthJHS
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Tc = 25°C, Derate 4.4W/°C above 25°C Tc = 25°C
880 440 3.0
W W W
GATE
0.17 C/W 0.34 C/W Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. V 4.25 6.5 ±100
TJ = 25C TJ =125C
SG1
SG2
SD1
SD2
Symbol
Features
VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0
600 3.5
Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − −
cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials
V nA µA mA Ω S
50 1 0.437 15.2 -55 175 -55 + 175 300 3.5 +175
VGS = 20 V, ID = 0.5ID...
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