IXZ318N50

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) PDC = = = 500 V 19.0 A 880 W Maximum Ratings 500 500 ±20 ±30 19 95 19 TBD V V V V A A A mJ = 0.325 Ω 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB RthJC RthJHS www.DataSheet4U.com Tc = 25°C, Derate 4.4W/°C above 25°C Tc = 25°C 880 440 3.0 W W W GATE 0.17 C/W 0.34 C/W Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. V 6.5 ±100 TJ = 25C TJ =125C SG1 SG2 SD1 SD2 Symbol Features VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 500 3.5 Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power − − cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V nA µA mA Ω S 50 1 0.325 14 -55 175 -55 + 175 300 3.5 +175 VGS = 20 V, ID = 0.5ID25 Pu...