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MA2SD25 Datasheet, Equivalent, planar type.

Silicon epitaxial planar type

Silicon epitaxial planar type

 

 

 

Part MA2SD25
Description Silicon epitaxial planar type
Feature Schottky Barrier Diodes (SBD) MA2SD25 S ilicon epitaxial planar type Unit: mm For super high speed switching 0.
80+0.
0 5 –0.
03 0.
80±0.
05 0.
60+0.
05 –0.
03 0.
12+0.
05 –0.
02 (0.
80) (0.
60) 0.
0 1±0.
01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage ( DC) Repetitive peak reverse-voltage Pea k forward current Average forward curre nt Non-repetitive peak forwardsurge-cur rent * Junction temperature Storage tem perature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 − 55 to +125 Unit V 5° 2 0.
30±0.
05 0+ 0 –0.
05 0.
01±0.
01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-7 .
Manufacture Panasonic Semiconductor
Datasheet
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Part MA2SD25
Description Silicon epitaxial planar type
Feature Schottky Barrier Diodes (SBD) MA2SD25 S ilicon epitaxial planar type Unit: mm For super high speed switching 0.
80+0.
0 5 –0.
03 0.
80±0.
05 0.
60+0.
05 –0.
03 0.
12+0.
05 –0.
02 (0.
80) (0.
60) 0.
0 1±0.
01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage ( DC) Repetitive peak reverse-voltage Pea k forward current Average forward curre nt Non-repetitive peak forwardsurge-cur rent * Junction temperature Storage tem perature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 − 55 to +125 Unit V 5° 2 0.
30±0.
05 0+ 0 –0.
05 0.
01±0.
01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-7 .
Manufacture Panasonic Semiconductor
Datasheet
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MA2SD25

MA2SD25
MA2SD25

MA2SD25

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